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2SK3309
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV)
2SK3309
Switching Regulator Applications
* * * * Low drain-source ON resistance: RDS (ON) = 0.48 (typ.) High forward transfer admittance: |Yfs| = 4.3 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 450 V) Enhancement-mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 450 450 30 10 40 65 222 10 6.5 150 -55~150 Unit V V V A W mJ A mJ C C
Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 1.92 83.3 Unit C/W C/W
Note 1: Please use devise on condition that the channel temperature is below 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 3.7 mH, RG = 25 , IAR = 10 A Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. JEDEC JEITA TOSHIBA 2-10S2B
Weight: 1.5 g (typ.)
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2SK3309
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Gate -source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr 10 V VGS 0V 10 ID = 5 A VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 450 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 5 A VDS = 10 V, ID = 5 A Min 30 450 550 3.0 1.5 Typ. 0.48 4.3 920 12 140 25 Max 10 100 5.0 0.65 pF Unit A V A V V S

VOUT

ns
Turn-on time Switching time Fall time
ton
RL = 40
35
tf Duty < 1%, tw = 10 s = VDD 200 V -
VDD 360 V, VGS = 10 V, ID = 10 A -
10

nC
Turn-off time Total gate charge Gate-source charge Gate-drain charge
toff Qg Qgs Qgd
60 23 9 14
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 10 A, VGS = 0 V IDR = 10 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 280 2.7 Max 10 40 -1.7 Unit A A V ns C
Marking
K3309
Lot Number
Type
Month (starting from alphabet A) Year (last number of the christian era)
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2SK3309
ID - VDS
10 Common source Tc = 25C Pulse test 15 10 20 8.5 8 16 15 10
ID - VDS
Common source 9 Tc = 25C Pulse test
8
Drain current ID (A)
Drain current ID (A)
6 7.5
12
8.5 8
4
7
8
7.5 7 VGS = 6 V
2 VGS = 6 V 0 0
4
2
4
6
8
10
0 0
10
20
30
40
50
Drain-source voltage
VDS (V)
Drain-source voltage
VDS (V)
ID - VGS
20 Common source 10 VDS = 20 V Pulse test
VDS - VGS
Common source Tc = 25C Pulse test
VDS (V) Drain-source voltage
16
8
Drain current ID (A)
12
6
ID = 10 A
8 25 4 Tc = -55C
4 5 2 2.5 0 0
100
0 0
2
4
6
8
10
12
4
8
12
16
20
Gate-source voltage
VGS (V)
Gate-source voltage
VGS (V)
Yfs - ID
100 Common source VDS = 20 V Pulse test 10 Common source Tc = 25C Pulse test
RDS (ON) - ID
Forward transfer admittance Yfs
(S)
10 Tc = -55C 100 25
Drain-source on resistance RDS (ON) ()
1 VGS = 10, 15 V
1
0.1 0.1
1
10
100
0.1 1
10
100
Drain current ID (A)
Drain current ID (A)
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2SK3309
RDS (ON) - Tc
2.0 Common source 100 Common source Tc = 25C Pulse test 10 VGS = 10 V Pulse test
IDR - VDS
Drain-source on resistance RDS (ON) ()
1.6
5 1.2 ID = 10 A 2.5 0.8
Drain reverse current IDR
(A)
1 10 5 0.1 3 1 VGS = 0, -1 V -0.6 -0.8 -1 -1.2
0.4
0 -80
-40
0
40
80
120
160
0.01 0
-0.2
-0.4
Case temperature Tc
(C)
Drain-source voltage
VDS (V)
Capacitance - VDS
10000 6
Vth - Tc
Common source VDS = 10 V ID = 1 mA Pulse test
Vth (V) Gate threshold voltage
5
1000
Capacitance C
(pF)
Ciss
4
3
100
Coss
2
10 Common source VGS = 0 V f = 1 MHz 1 0.1 1 10
Crss
1
0 -80 100 1000
-40
0
40
80
120
160
Case temperature Tc
(C)
Drain-source voltage
VDS (V)
PD - Tc
100 500
Dynamic input/output characteristics
Common source ID = 10 A Tc = 25C Pulse test 20
Drain power dissipation PD (W)
VDS (V)
80
400 VDD = 90 V 300 VDS 360 200 180
16
Drain-source voltage
40
VGS
8
20
100
4
0 0
40
80
120
160
200
0 0
10
20
30
40
0 50
Case temperature Tc
(C)
Total gate charge Qg (nC)
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Gate-source voltage
60
12
VGS (V)
2SK3309
rth - tw
10
Normalized transient thermal impedance rth (t)/Rth (ch-a)
1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM t T Duty = t/T Rth (ch-c) = 1.92C/W 0.001 10
Single pulse
100
1m
10 m
100 m
1
10
Pulse width
tw
(S)
Safe operating area
100 ID max (pulse) * 400
EAS - Tch
Avalanche energy EAS (mJ)
ID max (continuous) 10
100 s *
300
(A)
1 ms *
200
Drain current ID
1
DC operation Tc = 25C
100
0 25 0.1 * Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 0.01 1 10 100 1000 VDSS max
50
75
100
125
150
Channel temperature (initial) Tch (C)
15 V -15 V
VDS (V)
BVDSS IAR VDD VDS
Drain-source voltage
Test circuit RG = 25 VDD = 90 V, L = 3.7 mH
Wave form
AS =
1 B VDSS L I2 B 2 - VDD VDSS
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2SK3309
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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2006-11-06

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